Low writing energy and sub nanosecond spin torque transfer switching of in-plane magnetic tunnel junction for spin torque transfer random access memory
نویسندگان
چکیده
منابع مشابه
Study of Two Writing Schemes for a Magnetic Tunnel Junction Based On Spin Orbit Torque
MRAM technology provides a combination of fast access time, non-volatility, data retention and endurance. While a growing interest is given to two-terminal Magnetic Tunnel Junctions (MTJ) based on Spin-Transfer Torque (STT) switching as the potential candidate for a universal memory, its reliability is dramatically decreased because of the common writing/reading path. Three-terminal MTJ based o...
متن کاملNanosecond-Timescale Low Energy Switching of In-Plane Magnetic Tunnel Junctions through Dynamic Oersted-Field-Assisted Spin Hall Effect.
We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with write error rates down to 10-5, using current pulses as short as just 2 ns in duration. This represents the fastest reliable switching reported to date for any ...
متن کاملA Compact Model for the Magnetic Tunnel Junction Switched by Thermally Assisted Spin Transfer Torque (STT+TAS)
Thanks to its non-volatility, high write/read speed and easy integration with CMOS process, Magnetic Tunnel Junctions (MTJ) has become a cornerstone of spin electronics such as the Magnetic RAM (MRAM) [1] and Magnetic logic [2-3]. The current research in MTJ nanopillar focus on the high performance (power efficient, high speed and high reliability) switching approaches, as the two high currents...
متن کاملHigh TMR and Low RA in Mg-B-O and Ni-Fe-B Nanopillar Fabrication for Spin-Torque Switching
Spin-torque transfer-induced magnetization switching has many applications, such as spin-torque magnetic random access memory (ST-MRAM) and has potential applications for tunable microwave oscillators at the gigahertz (GHz) range. Magnesium oxide (MgO)-based magnetic tunnel junctions for ST-MRAM especially attract great attention due to their high tunneling magnetoresistance (TMR) at room tempe...
متن کاملSpin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory
We present experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions. The experiments show that, for MgObased magnetic tunnelling junctions, the tunnelling magnetoresistance ratio is as large as 155% and the intrinsic switching current density is as low as 1.1× 10 A cm. The thermal effect and current pulse width on spin-transfer magnetization swit...
متن کامل